Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
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DOI：
10.1143/jjap.49.051301
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发表时间：
2010-05
影响因子：
1.5
通讯作者：
A. Uedono;K. Tsutsui;S. Ishibashi;Hiromichi Watanabe;S. Kubota;Y. Nakagawa;B. Mizuno;T. Hattori;H. Iwai
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文献类型：
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作者：
A. Uedono;K. Tsutsui;S. Ishibashi;Hiromichi Watanabe;S. Kubota;Y. Nakagawa;B. Mizuno;T. Hattori;H. Iwai
用单能正电子束探测了等离子体浸没注硼硅中的空位型缺陷。测量了湮没辐射的多普勒展宽谱，并与用投影增强波方法计算的谱进行了比较。对于掺杂样品，发现富空位区位于0-10 nm的深度处，并且确定主要缺陷物种为双空位-B络合物。在1075 °C的尖峰快速热退火后，发现对应于高B浓度区域（4-30 nm）的多普勒展宽谱的线形参数S小于无缺陷Si获得的特征S值。从多普勒展宽谱的详细分析，在S值的下降的起源归因于正电子的捕获带负电荷的B团簇，如二十面体B12。
Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the projector augmented-wave method. For the as-doped sample, the vacancy-rich region was found to be localized at a depth of 0–10 nm, and the major defect species were determined to be divacancy–B complexes. After spike rapid thermal annealing at 1075 °C, the lineshape parameter S of Doppler broadening spectra corresponding to the high-B-concentration region (4–30 nm) was found to be smaller than the characteristic S value obtained for defect-free Si. From a detailed analysis of the Doppler broadening spectra, the origin of the decrease in the S value was attributed to the trapping of positrons by negatively charged B clusters such as icosahedral B12.