Controlling the photoluminescence of gallium arsenide with trains of ultrashort laser pulses
Controlling the photoluminescence of gallium arsenide with trains of ultrashort laser pulses
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DOI：
10.1103/physrevb.82.115204
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发表时间：
2010-09
影响因子：
3.7
通讯作者：
Zhan Hu;S. Singha;R. Gordon
中科院分区：
文献类型：
--
作者：
Zhan Hu;S. Singha;R. Gordon
用三列等间隔飞秒激光脉冲在砷化镓100中诱导电子复合。当脉冲间距为纵向光学声子周期的整数倍时，可以观察到E1跃迁产生的光致发光。这种效应也可以通过改变脉冲的相对光相位和偏振面来控制。这些观察结果可以用一种机制来解释，在等离子体中激发的热电子与底层晶格碰撞，产生相干激发的声子，这些声子将载流子散射到L谷中，在那里它们重新组合。
A train of three equally spaced femtosecond laser pulses is used to induce electron recombination in GaAs 100 . Photoluminescence from the E1 transition is observed when the spacing between the pulses is an integer multiple of the longitudinal-optical phonon period. This effect is also controlled by varying the relative optical phase and the polarization plane of the pulses. These observations are explained by a mechanism in which hot electrons excited in a plasma collide with the underlying lattice to produce coherently excited phonons, which scatter carriers into the L valley, where they recombine.