High-bandwidth perovskite photonic sources on silicon
High-bandwidth perovskite photonic sources on silicon
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DOI：
10.1038/s41566-023-01242-9
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发表时间：
2023-07
期刊：
影响因子：
35
通讯作者：
A. Ren;Hao Wang;Linjie Dai;Junfei Xia;Xinyu Bai;E. Butler-Caddle;Joel A. Smith;Huagui Lai;Junzhi Ye;Xiang Li;Shijie Zhan;Chunhui Yao;Zewei Li;M. Tang;Xueping Liu;Jinxin Bi;Bowei Li;Shen Kai;Rui Chen;Han Yan;Jintao Hong;Liming Yuan;I. Marko;A. Wonfor;Fan Fu;S. Hindmarsh;Ana M. Sánchez;J. Lloyd‐Hughes;S. Sweeney;A. Rao;N. Greenham;Jiang Wu;Yanrong Li;Q. Cheng;R. Friend;R. Penty;I. H. White;H. Snaith;Wei Zhang
中科院分区：
文献类型：
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作者：
A. Ren;Hao Wang;Linjie Dai;Junfei Xia;Xinyu Bai;E. Butler-Caddle;Joel A. Smith;Huagui Lai;Junzhi Ye;Xiang Li;Shijie Zhan;Chunhui Yao;Zewei Li;M. Tang;Xueping Liu;Jinxin Bi;Bowei Li;Shen Kai;Rui Chen;Han Yan;Jintao Hong;Liming Yuan;I. Marko;A. Wonfor;Fan Fu;S. Hindmarsh;Ana M. Sánchez;J. Lloyd‐Hughes;S. Sweeney;A. Rao;N. Greenham;Jiang Wu;Yanrong Li;Q. Cheng;R. Friend;R. Penty;I. H. White;H. Snaith;Wei Zhang
发光二极管（LED）在现代社会中无处不在，其应用范围从照明和显示器到医疗诊断和数据通信。金属卤化物钙钛矿具有优良的光电性能和溶液加工性能，是一种很有前途的发光二极管材料。尽管研究在优化其外部量子效率方面取得了实质性进展，但钙钛矿LED的调制特性仍然不清楚。在这里，我们报告了一个整体的方法来实现快速钙钛矿光子源硅的基础上定制烷基铵阳离子钙钛矿系统。我们揭示了带电物种的复合行为在各种载流子密度制度相关的调制性能。通过在硅上集成Fabry-Pérot微腔，我们展示了具有高效光外耦合的钙钛矿器件。我们实现了高达42.6 MHz的设备调制带宽和50 Mbps以上的数据速率，进一步的分析表明，带宽可能超过千兆赫的水平。这里开发的原理将支持下一代数据通信架构的钙钛矿光源的开发。在硅衬底上的溶液处理钙钛矿发射器的演示也开辟了与微电子平台集成的可能性。
Light-emitting diodes (LEDs) are ubiquitous in modern society, with applications spanning from lighting and displays to medical diagnostics and data communications. Metal-halide perovskites are promising materials for LEDs because of their excellent optoelectronic properties and solution processability. Although research has progressed substantially in optimizing their external quantum efficiency, the modulation characteristics of perovskite LEDs remain unclear. Here we report a holistic approach for realizing fast perovskite photonic sources on silicon based on tailoring alkylammonium cations in perovskite systems. We reveal the recombination behaviour of charged species at various carrier density regimes relevant for their modulation performance. By integrating a Fabry–Pérot microcavity on silicon, we demonstrate perovskite devices with efficient light outcoupling. We achieve device modulation bandwidths of up to 42.6 MHz and data rates above 50 Mbps, with further analysis suggesting that the bandwidth may exceed gigahertz levels. The principles developed here will support the development of perovskite light sources for next-generation data-communication architectures. The demonstration of solution-processed perovskite emitters on silicon substrates also opens up the possibility of integration with micro-electronics platforms.