Control of Crystal Structure of BiFeO3 Epitaxial Thin Films by Adjusting Growth Conditions and Piezoelectric Properties
Control of Crystal Structure of BiFeO3 Epitaxial Thin Films by Adjusting Growth Conditions and Piezoelectric Properties
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DOI：
10.1143/jjap.51.09lb04
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发表时间：
2012-09-01
影响因子：
1.5
通讯作者：
Fujimura, Norifumi
中科院分区：
文献类型：
--
作者：
Kawahara, Yusaku;Ujimoto, Katsuya;Fujimura, Norifumi
研究了外延应变对（100）BiFeO 3薄膜晶体结构和压电性能的影响。通过调节薄膜厚度和生长温度，控制脉冲激光沉积BiFeO 3薄膜的外延应变。从X射线衍射倒易空间映射和面内压电力显微镜的结果发现，BiFeO 3薄膜的晶体结构是一个菱形结构的四面体畸变，并随着薄膜厚度和生长温度的降低，四面体畸变的程度增加。从薄膜的电压-应变曲线可以看出，在低电压区电场应变以压电效应为主，而在高电压区出现电致伸缩效应。结果发现，压电应变增加的程度增加的tetraphite变形，这表明，BiFeO 3薄膜的压电性能可以提高使用的两种类型的结构变形的混合物。(C)2012日本应用物理学会
The effects of epitaxial strain on the crystal structure and piezoelectric properties of (100) BiFeO3 thin films were investigated. The epitaxial strain of BiFeO3 thin films grown by pulsed laser deposition was controlled by adjusting film thickness and growth temperature. From the results of X-ray diffraction reciprocal space mapping and in-plane piezoelectric force microscopy, it is found that the crystal structure of BiFeO3 thin films is a rhombohedral structure with tetragonal distortion, and that the extent of tetragonal distortion increases with decreasing film thickness and growth temperature. From the voltage-strain curves of the films, electric field strain is dominated by the piezoelectric effect in the low-voltage region, while the electrostrictive effect appears in the high-voltage region. It was found that piezoelectric strain increases with increasing extent of tetragonal distortion, which suggests that the piezoelectric properties of BiFeO3 thin films can be improved using a mixture of two types of structural distortion. (C) 2012 The Japan Society of Applied Physics