Structural, electrical and photoluminescence properties of Er3 -doped SrBi4Ti4O15Bi4Ti3O12 inter-growth ceramics

Structural, electrical and photoluminescence properties of Er3 -doped SrBi4Ti4O15Bi4Ti3O12 inter-growth ceramics
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Er3掺杂SrBi4Ti4O15-Bi4Ti3O12共生陶瓷的结构、电学和光致发光性能

DOI:
10.1007/s11706-019-0454-3
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发表时间:
2019
影响因子:
2.7
通讯作者:
Su Chunyang
Su Chunyang
中科院分区:
材料科学3区
文献类型:
--
作者:
Liu Fang;Jiang Xiangping;Chen Chao;Nie Xin;Huang Xiaokun;Chen Yunjing;Hu Hao;Su Chunyang

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采用固相反应法制备了Er3+掺杂的SrBi4Ti4O15-Bi4Ti3O12 (SBT-BIT-xEr3+, x = 0.00, 0.05, 0.10, 0.15和0.20)间生长陶瓷。研究了SBT-BIT-xEr3+的结构、电学和上转换性能。所有样品均呈单相正交结构。拉曼光谱结果表明,Er3+取代Bi3+后,SBT-BIT-xEr3+陶瓷的晶格畸变增大。Er3+取代Bi3+使介质损耗tanδ降低,电导率活化能增加。Er3 +的掺杂使压电常数d33略有提高,但使介电常数降低。当x = 0.15时,SBT-BIT-xEr3+陶瓷表现出最佳的电学性能(d33 ~17 pC/N, tanδ ~0.83%)。此外,在980 nm激发下,观察到两个亮绿色(532和548 nm)和一个红色(670 nm)发射带。当x = 0.15时,SBT-BIT-xEr3+陶瓷的发射强度达到最佳。因此,这种陶瓷应该是多功能光电应用的有前途的候选者。
Er3+-doped SrBi4Ti4O15-Bi4Ti3O12 (SBT-BIT-xEr3+, x = 0.00, 0.05, 0.10, 0.15 and 0.20) inter-growth ceramics were synthesized by the solid-state reaction method. Structural, electrical and up-conversion properties of SBT-BIT-xEr3+ were investigated. All samples showed a single phase of the orthorhombic structure. Raman spectroscopy indicated that the Er3+ substitution for Bi3+ at A sites of the pseudo-perovskite layer increases the lattice distortion of SBT-BIT-xEr3+ ceramics. The substitution of Bi3+ by Er3+ leads to a decrease of dielectric loss tanδ and an increase of conductivity activation energy. Piezoelectric constant d33 was slightly improved, but dielectric constant was decreased with the Er3 + doping. The SBT-BIT-xEr3+ ceramic with x = 0.15 exhibits the optimized electrical behavior (d33 ~17 pC/N, tanδ ~0.83%). Moreover, two bright green (532 and 548 nm) and one red (670 nm) emission bands were observed under the 980 nm excitation. Optimized emission intensity was also obtained when x = 0.15 for the SBT-BIT-xEr3+ ceramic. Therefore, this kind of ceramics ought to be promising candidates for multifunctional optoelectronic applications.