SNS Junctions for AC Josephson Voltage Standards
SNS Junctions for AC Josephson Voltage Standards
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DOI：
10.1016/j.phpro.2012.06.128
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
T. Scheller;F. Mueller;R. Wendisch;O. Kieler;U. Springborn;K. Stoerr;B. Egeling;T. Weimann;L. Palafox;R. Behr;J. Kohlmann
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文献类型：
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作者：
T. Scheller;F. Mueller;R. Wendisch;O. Kieler;U. Springborn;K. Stoerr;B. Egeling;T. Weimann;L. Palafox;R. Behr;J. Kohlmann
研制了用于交流约瑟夫森电压标准（S：超导体，N：正常导体）的串联过阻尼SNS约瑟夫森结阵列。该结是基于NbxSi 1-x的障碍，允许通过改变铌含量和厚度的障碍的临界电流密度和特征电压的几乎独立的调谐。我们优化了共溅射NbxSi 1-x的结势垒沉积，因此我们能够制造具有高达69，632个结的约瑟夫森结系列阵列，在70 GHz微波照射下输出电压高达10 V。对于约3 mA的典型临界电流，10 V下的恒压阶跃宽度超过1 mA。
We developed and fabricated series arrays of overdamped SNS Josephson junctions for AC Josephson voltage standards (S: superconductor, N: normal conductor). The junctions are based on NbxSi1-x barriers allowing nearly independent tuning of critical current density and characteristic voltage by varying niobium content and thickness of the barrier. We optimised the junction barrier deposition for the co-sputtered NbxSi1-x so that we are able to fabricate Josephson junction series arrays with up to 69,632 junctions for output voltages up to 10V under 70GHz microwave irradiation. The width of the constant-voltage steps at 10V exceeds 1mA for a typical critical current of about 3mA.