The Coulomb interaction in van der Waals heterostructures
The Coulomb interaction in van der Waals heterostructures
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范德华异质结构中的库仑相互作用
DOI：
10.1007/s11433-018-9294-4
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Wei SuHuai
中科院分区：
文献类型：
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作者：
Huang Le;Zhong MianZeng;Deng HuiXiong;Li Bo;Wei ZhongMing;Li JingBo;Wei SuHuai
用第一性原理方法研究了一组货车德瓦耳斯（vdW）异质结构中的巨斯塔克效应（GSE）。提出了一个基于准费米能级的简单模型来描述外部垂直电场对带隙和带边的影响。虽然观察到一般的线性GSE，这是由异质结构中的每一层的带边的几乎线性变化引起的，当vdW异质结构受到小电场时，变化变得非线性。这是由于能带偏移引起的层间电荷转移以及层内和层间库仑相互作用的结果。因此，我们的工作提供了新的见解的非线性GSE在vdW异质结构的机制，这是重要的应用vdW异质结构的纳米电子器件。
The giant Stark effect (GSE) in a set of van der Waals (vdW) heterostructures is studied using first-principles methods. A straightforward model based on quasi-Fermi levels is proposed to describe the influence of an external perpendicular electric field on both band gap and band edges. Although a general linear GSE is observed, which is induced by the almost linear variation of the band edges of each layer in the heterostructures, when vdW heterostructures is subjected to small electric fields the variation becomes nonlinear. This can be attributed to the band offsets-induced interlayer charge transfer and resulted intraand inter-layer Coulomb interactions. Our work, thus offers new insight into the mechanism of the nonlinear GSE in vdW heterostructures, which is important for the applications of vdW heterostructures on nanoelectronic devices.