Technology Scaling Effect on the Relative Impact of NBTI and Process Variation on the Reliability of Digital Circuits
Technology Scaling Effect on the Relative Impact of NBTI and Process Variation on the Reliability of Digital Circuits
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DOI：
10.1109/tdmr.2012.2189402
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发表时间：
2012-04
影响因子：
2
通讯作者：
B. Vaidyanathan;A. Oates
中科院分区：
文献类型：
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作者：
B. Vaidyanathan;A. Oates
负偏置温度不稳定性（NBTI）对电路可靠性的影响通常在不考虑与制造工艺相关的可变性的情况下进行评估。随着技术的进步，制造工艺的可变性比晶体管NBTI寿命更大。因此，在分析电路可靠性时，考虑到晶体管和电路可靠性之间的明确联系是必要的。我们提出了一个被称为沉降的优点数字来描述频率将超过初始制造分布的电路的比例。我们使用降噪来评估NBTI和过程可变性，并且我们表明电路频率（或定时延迟）的降噪随着技术的扩展而达到峰值并减少。我们提出，在任何给定的技术中，环形振荡器的衰减都可以作为电路可靠性的最坏情况指标。
The impact of negative bias temperature instability (NBTI) on circuit reliability is typically assessed without accounting for the variability associated with the manufacturing process. With technology progression, manufacturing process variability scales more aggressively than transistor NBTI lifetime. Hence, a clear link between transistor and circuit reliability that takes variability into account is imperative to analyze circuit reliability. We propose a figure of merit termed fall-out to describe the proportion of circuits whose frequencies would exceed the initial manufacturing distribution. We use fall-out to assess NBTI and process variability in tandem, and we show that the fall-out of circuit frequency (or timing delay) peaks and diminishes as technology scales. We propose that the fall-out of a ring oscillator can be used as a worst-case indicator of circuit reliability in any given technology.