Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium
Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium
复制标题
DOI：
10.1088/1361-6528/aaa52e
复制
发表时间：
2018-02-23
期刊：
影响因子：
3.5
通讯作者：
Huffaker, Diana L.
中科院分区：
文献类型：
--
作者：
Kim, Hyunseok;Ren, Dingkun;Huffaker, Diana L.
我们展示了无催化剂的GaAs纳米线的选择性区域金属有机化学气相沉积（MOCVD）的GaAs和硅衬底上使用三乙基镓（TEGa）前体的生长。GaAs纳米线的两温生长-在低温下成核，然后在高温下纳米线伸长-几乎完全抑制了GaAs衬底上纳米线的径向过度生长，同时表现出几乎100%的垂直生长产率。通过在纳米线生长之前用砷终止Si（111）表面并优化生长温度，也在硅衬底上实现了100%的生长产率。与三甲基镓（TMGa）已专门采用在GaAs纳米线的气相生长的MOCVD相比，建议的生长技术，使用TEGa是有利的，因为较低的生长温度和完全抑制径向过度生长。还已知的是，与TMGa相比，通过TEGa生长的GaAs诱导更少的杂质掺入，因此所提出的方法可以是III-V族和硅平台上的基于GaAs外延片的高性能光电和纳米电子器件的构建块。
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium (TEGa) precursor. Two-temperature growth of GaAs nanowires-nucleation at low temperature followed by nanowire elongation at high temperature-almost completely suppresses the radial overgrowth of nanowires on GaAs substrates while exhibiting a vertical growth yield of almost 100%. A 100% growth yield is also achieved on silicon substrates by terminating Si(111) surfaces by arsenic prior to the nanowire growth and optimizing the growth temperature. Compared with trimethylgallium (TMGa) which has been exclusively employed in the vaporsolid phase growth of GaAs nanowires by MOCVD, the proposed growth technique using TEGa is advantageous because of lower growth temperature and fully suppressed radial overgrowth. It is also known that GaAs grown by TEGa induce less impurity incorporation compared with TMGa, and therefore the proposed method could be a building block for GaAs nanowire-based high-performance optoelectronic and nanoelectronic devices on both III-V and silicon platforms.