Direct Imaging of Single Au Atoms Within GaAs Nanowires
Direct Imaging of Single Au Atoms Within GaAs Nanowires
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DOI：
10.1021/nl300314k
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发表时间：
2012-05-01
期刊：
影响因子：
10.8
通讯作者：
Houben, Lothar
中科院分区：
文献类型：
--
作者：
Bar-Sadan, Maya;Barthel, Juri;Houben, Lothar
在半导体纳米线的生长过程中，催化剂原子的引入降低了电子的平均自由程，降低了它们的电子性质。像差校正扫描透射电子显微镜（STEM）现在能够直接成像的GaAs晶体的致密基质内的单个Au原子，通过稍微倾斜的GaAs晶格平面相对于入射电子束。测量到大约10（17-18）cm（3）的Au掺杂值，使得实际上无法通过纳米线进行弹道传输。
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the electron mean free path and degrades their electronic properties. Aberration-corrected scanning transmission electron microscopy (STEM) is now capable of directly imaging single Au atoms within the dense matrix of a GaAs crystal, by slightly tilting the GaAs lattice planes with respect to the incident electron beam. Au doping values in the order of 10(17-18) cm(3) were measured, making ballistic transport through the nanowires practically inaccessible.