Nanostructured AgPbmSbTem+2 system bulk materials with enhanced thermoelectric performance
Nanostructured AgPbmSbTem+2 system bulk materials with enhanced thermoelectric performance
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DOI：
10.1021/ja7110652
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发表时间：
2008-04-02
影响因子：
15
通讯作者：
Kita, Takuji
中科院分区：
文献类型：
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作者：
Zhou, Min;Li, Jing-Feng;Kita, Takuji
通过结合机械合金化（MA）和放电等离子烧结（SPS）方法制备了纳米结构Ag0.8Pbm+xSbTem+2（m = 18，x = 4.5）系统热电材料，然后进行几天的退火，以研究其对微观结构和热电性能的影响。研究发现，适当的退火处理可以同时降低电阻率和热导率，从而大大提高热电性能。在 700 K 下退火 30 天的样品获得了 2 x 10(-3) Ohm-cm 的低电阻率和 0.89 W m(-1) K-1 的低热导率。非常低的热导率被认为是由于嵌入基体中的纳米级富 Ag/Sb 区域所致。经过 30 天退火的样品在 700 K 下达到了 1.5 的高 ZT 值。
Nanostructured Ag0.8Pbm+xSbTem+2 (m = 18, x = 4.5) system thermoelectric materials have been fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS) methods followed by annealing for several days to investigate the effect on microstructure and thermoelectric performance. It was found that appropriate annealing treatment could reduce both the electrical resistivity and the thermal conductivity at the same time, consequently greatly enhancing the thermoelectric performance. A low electrical resistivity of 2 x 10(-3) Ohm-cm and low thermal conductivity of 0.89 W m(-1) K-1 were obtained for the sample annealed for 30 days at 700 K. The very low thermal conductivity is supposed to be due to the nanoscopic Ag/Sb-rich regions embedded in the matrix. A high ZT value of 1.5 at 700 K has been achieved for the sample annealed for 30 days.