Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements
Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements
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使用时间分辨光致发光模拟和测量确定分级吸收器太阳能电池中的电荷载流子寿命
DOI：
10.1002/solr.202201029
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发表时间：
2023
期刊：
影响因子：
7.9
通讯作者：
Kuciauskas, Darius
中科院分区：
文献类型：
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作者：
Bothwell, Alexandra M.;Reich, Carey L.;Danielson, Adam H.;Onno, Arthur;Holman, Zachary C.;Sampath, Walajabad S.;Kuciauskas, Darius
薄膜光电器件的效率受到载流子重组的限制，因此了解重组机制对提高性能至关重要。体积少数载流子寿命τ (Bulk)是太阳能电池的一个关键参数，但在P-N结器件中很难确定，特别是在高掺杂的情况下。由于有效的漂移电荷载流子收集器件需要掺杂≥1016cm−3，因此需要一种测定掺杂P-N结器件τ体积的方法。这项工作利用时间分辨光致发光（TRPL）模拟来量化高掺杂、梯度吸收剂CdSeTe结构的体和界面复合特性。这里开发的两种方法用于确定τ体积包括利用瞬时寿命表示来指导TRPL拟合和直接比较测量和模拟衰变。仿真验证了这两种方法都适用于最先进的器件架构，包括梯度带隙吸收剂、梯度掺杂和梯度寿命。在足够长的τ岩体中，主要的复合机制发生了变化，前后界面质量的作用更为突出。表面复合速度和导带偏移的评估说明了正导带偏移的电光优势，并强调了随着光伏器件整体质量的提高，改进接口的必要性。
Thin‐film photovoltaic device efficiencies are limited by carrier recombination, thus understanding recombination mechanisms is critical for performance improvements. Bulk minority carrier lifetime (τbulk) is a critical parameter for solar cells but is difficult to determine in P–N junction devices, especially for high doping. As doping ≥1016cm−3is required for efficient drift‐charge‐carrier‐collection devices, a method forτbulkdetermination in doped P–N junction devices is necessary. This work utilizes time‐resolved photoluminescence (TRPL) simulations to quantify bulk and interface recombination properties in highly doped, graded absorber CdSeTe structures. The two methods developed here forτbulkdetermination include utilization of an instantaneous lifetime representation to guide TRPL fitting and direct comparison between measured and simulated decays. Simulations verified that both methods are valid for state‐of‐the‐art device architectures which include graded bandgap absorbers, graded doping, and graded lifetimes. Shifts in the dominant recombination mechanism are identified for sufficiently longτbulk, where front and back interface quality plays a more prominent role. Evaluation of surface recombination velocities and conduction band offset illustrate electro‐optical advantages of a positive conduction band offset and highlight the necessity of improved interfaces as bulk quality in photovoltaic devices improves.
薄膜太阳能电池的高级表征
DOI：
--
发表时间：
2020
期刊：
影响因子：
--
作者：
Mathias C Brandt;Hannes Alber;Rudolf Berger;Ronald K Binder;J. Mascherbauer;Alexander Niessner;Martin Schmid;B. Wernly;Matthias Frick
通讯作者：
Matthias Frick