MEMS-Based Power Gating for Highly Scalable Periodic and Event-Driven Processing
MEMS-Based Power Gating for Highly Scalable Periodic and Event-Driven Processing
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基于 MEMS 的功率门控，用于高度可扩展的周期性和事件驱动处理
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
D. Peroulis
中科院分区：
文献类型：
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作者：
Michael B. Henry;Robert Lyerly;L. Nazhandali;A. Fruehling;D. Peroulis
对于具有较长待机时间的周期性和事件驱动型应用，控制泄漏至关重要。本文研究了将MEMS开关用于功率门控处理器，它消除了待机漏电，并允许高度可扩展的处理。结果表明，当采用MEMS开关进行功率选通时，低工艺节点和低阈值电压是最优的，它们提供低开关能量和高速度。我们还将MEMS门控处理器与最近的两个低泄漏处理器进行了比较，表明它非常适合待机时间超过100毫秒的应用。由于即将实现与CMOS的兼容，MEMS开关是低泄漏应用的一个有吸引力的选择。
For periodic and event-driven applications with long standby times, controlling leakage is essential. This paper investigates using MEMS switches for power gating processors, which eliminates standby leakage power and allows for highly scalable processing. We show that when power gating with a MEMS switch, low technology nodes and low threshold voltages, which offer low switching energy and high speeds, are optimal. We also compare a MEMS-gated processor to two recent low leakage processors and show that it is ideal for applications with 100+ ms standby times. With CMOS compatibility on the horizon, MEMS switches are an attractive option for low-leakage applications.