3.3 kV/1500A power modules for the world's first all-SiC traction inverter
3.3 kV/1500A power modules for the world's first all-SiC traction inverter
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DOI：
10.7567/jjap.54.04dp07
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发表时间：
2015-04-01
影响因子：
1.5
通讯作者：
Yamakawa, Satoshi
中科院分区：
文献类型：
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作者：
Hamada, Kenji;Hino, Shiro;Yamakawa, Satoshi
我们已经成功开发了额定电压为3.3 kV的4H-SiC器件，包括金属氧化物半导体场效应晶体管（mosfet）和肖特基势垒二极管（sbd）。通过对结场效应晶体管区（JFET）进行n型掺杂，SiC-MOSFET的导通损耗降低到与硅绝缘栅双极晶体管（IGBT）一样低。JFET掺杂技术可以有效地降低JFET区域的电阻温度系数，从而降低SiC-MOSFET在高温下的导通电阻。这些器件已应用于全球首款全sic牵引逆变器的3.3 kV/1500A模块。新型牵引逆变器系统的开关损耗比采用硅模块的传统逆变器系统的开关损耗约低55%。(C) 2015日本应用物理学会
We have successfully developed 4H-SiC devices including metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with a rated voltage of 3.3 kV. The conduction loss of the SiC-MOSFET was reduced to as low as that of the Si-insulated gate bipolar transistor (IGBT) by the n-type doping of the junction field-effect transistor region (JFET doping). The JFET doping technique is effective in reducing the temperature coefficient of resistance in the JFET region, leading to the decreased on-resistance of the SiC-MOSFET at high temperatures. These devices have been applied to 3.3 kV/1500A modules for the world's first all-SiC traction inverter. The switching loss of the new traction inverter system is approximately 55% less than that of a conventional inverter system incorporating Si modules. (C) 2015 The Japan Society of Applied Physics