Magnetoresistance enhancement in epitaxial magnetite films grown on vicinal substrates
Magnetoresistance enhancement in epitaxial magnetite films grown on vicinal substrates
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DOI：
10.1103/physrevb.72.134404
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发表时间：
2005-10
影响因子：
3.7
通讯作者：
S. Arora;R. Sofin;I. Shvets
中科院分区：
文献类型：
--
作者：
S. Arora;R. Sofin;I. Shvets
比较了在低邻位小误切和高邻位大误切 MgO 衬底上生长的外延磁铁矿 Fe3O4 的磁阻磁阻行为。与在低邻位 MgO 上生长的薄膜相比，高邻位基底上的 Fe3O4 薄膜的磁化测量显示磁矩减小，这与由于阶跃边缘诱导具有面外位移矢量的额外反相边界 APB 导致的预期磁矩减小密切相关。高邻位基底上的 4 5 nm Fe 3O4 薄膜在 2 T 时的 MR 明显高于低邻位基底上的薄膜在 2 T 时观察到的 7.2%。在 MR 中观察到与原子台阶边缘方向相关的强各向异性。除了MR的增加之外，MR的场依赖性也被修改。观察到的外延 Fe3O4 薄膜磁输运行为的改变归因于由于原子高度台阶的存在而产生的自旋散射增强，从而导致形成更高密度的反铁磁耦合 APB。 DOI：10.1103/PhysRevB.72.134404 PACS 编号：75.47.m、72.25.b、75.50.Bb、85.75.d
The magnetoresistance MR behavior of epitaxial magnetite Fe3O4 grown on low-vicinal small miscut and high-vicinal large miscut MgO substrates is compared. Magnetization measurements on Fe3O4 films on high-vicinal substrates showed reduced magnetic moment as compared with the films grown on low-vicinal MgO, which correlates well with the expected reduction in magnetic moment due to step edge induced additional antiphase boundaries APBs with out-of-plane shift vectors. The MR is significantly higher 12.3% at 2 T for a4 5 nm Fe 3O4 film on high-vicinal substrate than that observed 7.2% at 2 T for a film on low-vicinal substrate. A strong anisotropy in the MR is observed in correlation with the direction of atomic step edges. In addition to the increase in MR, the field dependency of the MR is also modified. The observed modification in the magnetotransport behavior of epitaxial Fe3O4 films is attributed to an enhanced spin scattering arising due to the presence of atomic height steps that lead to the formation of a greater density of antiferromagnetically coupled APBs. DOI: 10.1103/PhysRevB.72.134404 PACS numbers: 75.47.m, 72.25.b, 75.50.Bb, 85.75.d