Improved photovoltaic performance of quantum dot-sensitized solar cells using multi-layered semiconductors with the effect of a ZnSe passivation layer
Improved photovoltaic performance of quantum dot-sensitized solar cells using multi-layered semiconductors with the effect of a ZnSe passivation layer
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DOI:
10.1039/c7nj00600d
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发表时间:
2017-06
影响因子:
3.3
通讯作者:
A. Subramanian;Dinah Punnoose;S. S. Rao-S.;Chebrolu Venkata Thulasi Varma;Bandari Naresh;Vivekanandan Raman;Hee-jee Kim
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文献类型:
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作者:
A. Subramanian;Dinah Punnoose;S. S. Rao-S.;Chebrolu Venkata Thulasi Varma;Bandari Naresh;Vivekanandan Raman;Hee-jee Kim
Lead chalcogenide colloidal quantum dots (QDs) are potential candidates for applications effective in the near infrared spectral range. Photoanodes were sensitized with PbS/CdS/CdSe/ZnS and PbS/CdS/CdSe/ZnSe via a simple successive ion layer adsorption and reaction (SILAR) technique. In the present study, ZnSe was used as an alternative to ZnS. ZnSe was deposited on a TiO2/PbS/CdS/CdSe photoanode, which was more efficient in reducing electron recombination in the QDSSCs. The performance of the QDSSCs was scrutinized using a polysulfide electrolyte and a copper sulfide counter electrode. The PbS/CdS/CdSe/ZnSe electrode resulted in enhanced efficiency as compared to the PbS/CdS/CdSe/ZnS-sensitized QDs. Red shifts with PbS/CdS/CdSe/ZnSe were observed, which were attributed to the combined effect of QDs. This was confirmed via photovoltaic studies and electrochemical impedance spectroscopy. The PbS/CdS/CdSe/ZnSe electrode exhibits a short circuit current density of 17.53 mA cm2 with an enhanced power to conversion efficiency (η) of 4.15% under 1 Sun illumination (AM 1.5G, 100 mW cm−2).