Theoretical and experimental investigations on temperature induced wavelength shift of tapered laser diodes based on InGaAs∕GaAs quantum dots
Theoretical and experimental investigations on temperature induced wavelength shift of tapered laser diodes based on InGaAs∕GaAs quantum dots
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DOI：
10.1063/1.2767977
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发表时间：
2007-08
影响因子：
4
通讯作者：
W. Kaiser;J. Reithmaier;A. Forchel;H. Odriozola;I. Esquivias
中科院分区：
文献类型：
--
作者：
W. Kaiser;J. Reithmaier;A. Forchel;H. Odriozola;I. Esquivias
研究了在920nm发射的锥形量子点激光二极管，锥度损耗对温度诱导波长位移的影响。实验得到的锥度损失结果与自洽的完全稳态电学、热学和光学模型的模拟结果进行了比较。理论与实验结果很吻合。该器件长度为3mm，前晶面宽度为35μm，波长稳定性为0.14nm∕K，输出功率超过900mW，光束传播系数M2为2.4。
The influence of the taper losses on the temperature induced wavelength shift of tapered quantum dot laser diodes emitting at 920nm was investigated. The experimentally obtained results of the taper losses were compared with simulations carried out by a self-consistent, complete steady-state electrical, thermal, and optical model. A good agreement between theory and experiment was found. The device geometry with a length of 3mm and a front facet width of 35μm yielded the best wavelength stability of 0.14nm∕K and exhibits an output power of more than 900mW with a beam-propagation factor M2 of 2.4.