Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation
Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation
复制标题
使用 3D MC 模拟离散杂质对超短 MOSFET 中电子传输的影响
DOI：
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发表时间：
2003
影响因子：
3.1
通讯作者：
P. Hesto
中科院分区：
文献类型：
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作者：
P. Dollfus;A. Bournel;S. Galdin;Sylvain Barraud;P. Hesto
本文讨论了短栅MOSFET中沟道杂质分布对输运和驱动电流的影响。一个仔细的描述电子-离子相互作用的离散杂质的情况下，已实施的三维粒子蒙特卡罗模拟器。该输运模型被应用于50纳米MOSFET工作的研究。结果表明，掺杂杂质的数量或单个分立杂质在反型层中的位置的微小变化都可能对漏电流产生显著影响。这种效应不仅与阈值电压波动有关，而且与反型层中的输运性质的变化有关，特别是在高漏极电压下。结果进行了分析的电子速度和电流密度的局部波动。在一组15个模拟器件中，发现在V/sub GS/=V/sub DS/=0.6 V处确定的驱动电流I/sub on/根据沟道杂质的位置在23%的范围内变化。
This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFETs. A careful description of electron-ion interaction suitable for the case of discrete impurities has been implemented in a three-dimensional particle Monte Carlo simulator. This transport model is applied to the investigation of 50-nm MOSFET operation. The results show that a small change in the number of doping impurities or in the position of a single discrete impurity in the inversion layer may significantly influence the drain current. This effect is not only related to threshold voltage fluctuations but also to variations in transport properties in the inversion layer, especially at high drain voltage. The results are analyzed in terms of local fluctuations of electron velocity and current density. In a set of fifteen simulated devices the drive current I/sub on/, determined at V/sub GS/=V/sub DS/=0.6 V, is found to vary in a range of 23% according to the position of channel impurities.