Modification of magnetocrystalline anisotropy via ion-implantation
Modification of magnetocrystalline anisotropy via ion-implantation
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DOI：
10.1063/1.5134867
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发表时间：
2020-04-01
期刊：
影响因子：
1.6
通讯作者：
Takamura, Yayoi
中科院分区：
文献类型：
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作者：
Lee, Michael S.;Chopdekar, Rajesh, V;Takamura, Yayoi
系统地修改外延La0.7Sr0.3MnO3薄膜的磁性能的能力证明通过使用Ar+离子注入。随着注入剂量的增加，单轴膨胀的c轴的晶胞导致从平面内向垂直磁各向异性的过渡。在3 × 10（13）Ar+/cm（2）的临界剂量以上，存在显著的结晶无序，导致平均Mn价态的降低和磁化强度的几乎完全抑制。结合光刻技术，离子注入能够在复合氧化物薄膜中制造由具有可调磁各向异性的相邻区域组成的磁自旋织构。
The ability to systematically modify the magnetic properties of epitaxial La0.7Sr0.3MnO3 thin films is demonstrated through the use of Ar+ ion implantation. With increasing implant dose, a uniaxial expansion of the c-axis of the unit cell leads to a transition from in-plane toward perpendicular magnetic anisotropy. Above a critical dose of 3 x 10(13) Ar+/cm(2), significant crystalline disorder exists leading to a decrease in the average Mn valence state and near complete suppression of magnetization. Combined with lithographic techniques, ion implantation enables the fabrication of magnetic spin textures consisting of adjacent regions with tunable magnetic anisotropy in complex oxide thin films.