Band gaps of lattice-matched (Ga,In)(As,N) alloys
Band gaps of lattice-matched (Ga,In)(As,N) alloys
复制标题
晶格匹配的 (Ga,In)(As,N) 合金的带隙
DOI：
10.1063/1.125083
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发表时间：
1999
影响因子：
4
通讯作者：
L. Bellaiche
中科院分区：
文献类型：
--
作者：
L. Bellaiche
用赝势法计算了GaInAsN合金与GaAs和InP晶格匹配的带隙随氮组分和压强的变化。计算结果与实验结果非常吻合，实验结果仅适用于小氮成分。当进一步增加氮含量时，两个晶格匹配系统的带隙被预测为显著减小。结果，对于足够大的氮成分（约12%-20%），两个系统的带隙关闭。
The band gaps of the GaInAsN alloys lattice-matched to GaAs and InP have been calculated as a function of the nitrogen composition and as a function of pressure, by using a pseudopotential technique. The calculations are in excellent agreement with the experimental results, which are only available for small nitrogen compositions. The band gap of both lattice-matched systems is predicted to significantly decrease when further increasing the nitrogen content. As a result, the band gap of both systems closes for large enough nitrogen compositions (around 12%–20%).