Deep level related photoluminescence in ZnMgO
Deep level related photoluminescence in ZnMgO
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DOI：
10.1063/1.3518480
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发表时间：
2010-11
影响因子：
4
通讯作者：
M. Trunk;V. Venkatachalapathy;A. Galeckas;A. Kuznetsov
中科院分区：
文献类型：
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作者：
M. Trunk;V. Venkatachalapathy;A. Galeckas;A. Kuznetsov
利用温度依赖的光致发光研究了ZnMgO层中的光学活性深能级。通过金属有机物气相外延在c面蓝宝石上生长的样品表现出Mg含量范围从0%到8.5%，导致逐渐的带隙加宽。深能级发光被发现由几个发射组件集中在2，2.3，2.5，2.8，和3 eV。随着Mg浓度的增加，2.8和3eV处的带发生蓝移，2.3和2.5eV处的带发生红移，而2eV处的带保持不变。提出了一个模型来解释深能级发光位移的趋势，在自然的Zn和O亚晶格缺陷与引入Mg晶体的相互作用。
Optically active deep levels were investigated in ZnMgO layers using temperature dependent photoluminescence. The samples, grown on c-plane sapphire by metal-organic vapor phase epitaxy, exhibited Mg contents ranging from 0% to 8.5% leading to a gradual band gap broadening. The deep level luminescence was found to consist of several emission components centered at 2, 2.3, 2.5, 2.8, and 3 eV. With increasing Mg concentration, the bands at 2.8 and 3eV were found to blueshift, the bands at 2.3 and 2.5eV redshift, while the band at 2 eV holds its position. A model is suggested explaining the deep level luminescence shift trends in terms of interaction of native Zn and O sublattice defects with the introduced Mg interstitials.