The Role of Si Self-interstitial Atoms in the Formation of Electrically Active Defects in Reverse-Biased Silicon n + -p Diodes upon Irradiation with Alpha Particles
The Role of Si Self-interstitial Atoms in the Formation of Electrically Active Defects in Reverse-Biased Silicon n + -p Diodes upon Irradiation with Alpha Particles
复制标题
硅自填隙原子在α粒子辐照下反向偏置硅n-p二极管电活性缺陷形成中的作用
DOI：
10.1002/pssa.202100104
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Aharodnikau D
中科院分区：
文献类型：
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作者：
Aharodnikau D
研究了在外加反向偏置电压下，用α粒子辐照硼掺杂外延硅上的n+-p二极管引起的电特性变化。结果发现，与中性基区和无偏置辐照的类似二极管相比，辐照导致反向偏置结构的空间电荷区中载流子补偿辐射诱导缺陷（RID）的引入率显着降低。辐照二极管的电容瞬态谱中的主要空穴和电子发射信号的特征在于，并与中度掺杂的p型Si：B中的一些已知RID的能级相识别。在辐照后少数载流子注入和热处理后，监测缺陷浓度的变化。有人认为，在二极管的空间电荷区中观察到的RID浓度降低的效果主要与硅自发光（ISi）的一些特定特征有关：它们的热稳定性对电荷状态的非常强的依赖性以及在少数载流子注入条件下p型Si中高度增强的迁移率。测定了ISi双正电荷态的电子发射激活能。
Results of a study of changes in electrical characteristics of n+–p diodes on boron‐doped epi‐silicon induced by irradiation with alpha particles under applied reverse bias voltages are presented. It is found that the irradiation results in a significantly lower introduction rate of carrier‐compensating radiation‐induced defects (RIDs) in the space charge region of the reverse‐biased structures compared with those in the neutral base region and in similar diodes irradiated without bias. The dominant hole and electron emission signals in the capacitance transient spectra of the irradiated diodes are characterized and identified with energy levels of some known RIDs in moderately doped p‐type Si:B. Changes in concentration of the defects are monitored after postirradiation minority carrier injection and thermal treatments. It is argued that the observed effect of the reduced concentration of RIDs in the space charge regions of the diodes is related mainly to some specific features of the silicon self‐interstitials (ISi): a very strong dependence of their thermal stability on the charge state and a highly enhanced mobility in p‐type Si under minority carrier injection conditions. The activation energy of electron emission from the doubly positively charged state of ISiis determined.