Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition
Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition
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DOI：
10.1063/1.1352566
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发表时间：
2001-03
影响因子：
3.2
通讯作者：
Takayuki Watanabe;A. Saiki;K. Saito;H. Funakubo
中科院分区：
文献类型：
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作者：
Takayuki Watanabe;A. Saiki;K. Saito;H. Funakubo
研究了c轴取向外延生长的Bi4Ti3O12薄膜的铁电性与薄膜厚度的关系。采用金属有机化学气相沉积法在(100)CaRuO_3//(100)SrTiO_3衬底上外延生长了厚度为35~400 nm的c轴取向的Bi4Ti3O12薄膜。薄膜的介电常数和矫顽场几乎与薄膜厚度无关。这两个数值分别约为151kV/cm和18.8kV/cm。自发极化Ps在4 0μC/cm 2时基本恒定，与14 0 nm以上薄膜厚度无关。该值与单晶沿c轴的报告值几乎相同。当膜厚小于100 nm时，Ps值随膜厚的减小而减小。此外，随着薄膜厚度减小到400 nm以下，薄膜的剩余偏振度不断减小。结果表明，外延生长的Bi4Ti3O12薄膜的铁电性能也与薄膜厚度有关，与简单的外延生长的Bi4Ti3O12薄膜的铁电性能相似。
The film thickness dependence of the ferroelectricity of c-axis-oriented epitaxially grown Bi4Ti3O12 thin films was investigated. The c-axis-oriented Bi4Ti3O12 films with thicknesses from 35 to 400 nm were epitaxially grown on (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition. The dielectric constant and the coercive field of the films were almost independent of the film thickness. These values were about 151 and 18.8 kV/cm, respectively. The spontaneous polarization Ps was almost constant at 4.0 μC/cm2 and was independent of the film thickness above 140 nm. This value is almost the same as the reported value for the single crystal along the c axis. However, the Ps value decreased with decreasing film thickness below 100 nm. Moreover, the remanent polarization continuously decreased as the film thickness decreased below 400 nm. As a result, the ferroelectric property of the epitaxially grown Bi4Ti3O12 films also depended on the film thickness and was similar to that of simple p...