Three-dimensional structure of dislocations in silicon determined by synchrotron white x-ray topography combined with a topo-tomographic technique
Three-dimensional structure of dislocations in silicon determined by synchrotron white x-ray topography combined with a topo-tomographic technique
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DOI：
10.1088/0022-3727/38/10a/004
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发表时间：
2005-05-21
影响因子：
3.4
通讯作者：
Kajiwara, K
中科院分区：
文献类型：
--
作者：
Kawado, S;Taishi, T;Kajiwara, K
我们用同步加速器白X射线形貌术结合地形层析技术研究了直拉硅单晶生长早期产生的位错的传播和消除。研究了两种具有[001]生长轴的硅单晶。一种是故意不增大直径以便于观察位错扩展的特征，另一种是采用Dash颈缩生长，然后将其直径扩大2英寸，以观察位错的消除情况。确定了单个位错的三维结构，即位错线的方向、其Burgers矢量和滑动面。这些研究表明，由纠缠位错产生的位错半环在其滑动面上扩展，并经常因其与晶体表面的相互作用、交叉滑移和碰撞而变形，随后其密度逐渐减小。Dash颈缩的位错消除效应是由于终止于晶体内部的位错半环扩张并钉扎在晶体表面造成的。
We have studied the propagation and elimination of dislocations generated at the early stage of Czochralski silicon crystal growth using synchrotron white x-ray topography combined with a topo-tomographic technique. Two silicon crystals with [001] growth-axes were examined. One was intentionally grown without enlarging its diameter to easily observe the features of the dislocation propagation, and the other was grown with Dash necking, followed by a 2 inch enlargement of its diameter in order to observe the elimination of the dislocations. The three-dimensional structure of the individual dislocation, i.e. the direction of the dislocation line, its Burgers vector and the glide plane, were determined. These investigations revealed that dislocation half loops, which were generated from tangled dislocations, were expanded on their glide planes and were often deformed by their interaction, cross slip and collision with the crystal surface, followed by a gradual decrease in their density. The dislocation-elimination effect of the Dash necking was caused by the expansion of the dislocation half loops being terminated within the crystal and by their pinning on the crystal surface.