X-ray diffraction and Raman scattering study of SrBi₂Ta₂O[sub 9] ceramics and thin films with Bi₃TiNbO[sub 9] addition
X-ray diffraction and Raman scattering study of SrBi₂Ta₂O[sub 9] ceramics and thin films with Bi₃TiNbO[sub 9] addition
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DOI：
10.1063/1.1421642
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发表时间：
2001-11
影响因子：
4
通讯作者：
J. Zhu;H. Qin;Z. H. Bao;Yening Wang;W. Cai;P. P. Chen-P.;W. Lu;H. Chan;C. Choy
中科院分区：
文献类型：
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作者：
J. Zhu;H. Qin;Z. H. Bao;Yening Wang;W. Cai;P. P. Chen-P.;W. Lu;H. Chan;C. Choy
（1−x） SrBi2Ti2O9-xBi3TiNbO9体陶瓷和薄膜具有良好的铁电性能。本文利用x射线衍射和拉曼散射研究了Bi3TiNbO9掺入SrBi2Ta2O9体陶瓷和薄膜的影响。当x=0.3 ~ 0.4时，（1−x） SrBi2Ta2O9-xBi3TiNbO9具有良好的铁电性能，Ta-O(4)或Ta-O(5)离子结晶性好、晶粒尺寸大、位移量大。
Good ferroelectric properties have previously been reported for both the (1−x)SrBi2Ti2O9–xBi3TiNbO9 bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi3TiNbO9 into SrBi2Ta2O9 bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta–O(4) or Ta–O(5) ions are the origin for the good ferroelectric properties of (1−x)SrBi2Ta2O9–xBi3TiNbO9 with x=0.3–0.4.