Annealing effect on temperature coefficient of resistivity in La1-xSrxMnO3 ceramics
Annealing effect on temperature coefficient of resistivity in La1-xSrxMnO3 ceramics
复制标题
退火对La1-xSrxMnO3陶瓷电阻率温度系数的影响
DOI：
10.1016/j.jeurceramsoc.2012.10.023
复制
发表时间：
2013
影响因子：
5.7
通讯作者：
and Yukinori Maeda
中科院分区：
文献类型：
--
作者：
Isao Kagomiya;Shinji Matsumoto;Ken-ichi Kakimoto;Hitoshi Ohsato;Hiroshi Sakai;and Yukinori Maeda
我们研究了退火对La 1 − xSrxMnO 3（x=0-0.6）的电阻率和电阻率温度系数（TCR）的影响。退火样品的电阻率低于未退火样品的电阻率。例如，在25°C时，退火使x=0.3的电阻率从4.50×10− 5Ωm变为3.71×10−5Ωm。对于x=0.3、0.45和0.5，在退火后观察到TCR的显著差异。对于x=0.3，退火后的TCR为4000 ppm/°C，比退火前高1250 ppm/°C。我们研究了（1）晶相，（2）Mn平均价态，（3）Mott绝缘体-金属转变温度，和（4）显微结构。退火x=0.3和0.5的显微组织显着变化。x=0.3的平均晶粒尺寸从1.60 μ m增加到2.38μm。结果表明，退火对电阻率和TCR的影响是由于退火过程中晶粒的长大。
We investigated annealing effects of La1−xSrxMnO3(x=0–0.6) on electrical resistivity and the temperature coefficient of resistivity (TCR). The annealed samples’ resistivity was lower than those of non-annealed samples. For example, annealing changed the resistivity of x=0.3 at 25°C from 4.50×10−5to 3.71×10−5Ωm. Remarkable difference in TCR was observed after annealing, for x=0.3, 0.45, and 0.5. For x=0.3, the TCR after annealing was 4000ppm/°C, which was 1250ppm/°C greater than that before annealing. We investigated (1) crystal phase, (2) Mn average valence, (3) Mott insulator–metal transition temperature, and (4) microstructure. The microstructure was remarkably varied for annealed x=0.3 and 0.5. The average grain size of the x=0.3 increased from 1.60 up to 2.38μm. Results show that annealing affects resistivity and TCR because of grain growth during annealing.