Stress-induced voiding and its geometry dependency characterization

Stress-induced voiding and its geometry dependency characterization
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应力引起的空洞及其几何依赖性表征

DOI：
10.1109/relphy.2003.1197737
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发表时间：
2003
期刊：
2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
影响因子：
--
通讯作者：
Y.K. Peng
Y.K. Peng
中科院分区：
--
文献类型：
--
作者：
K. Doong;R.C.J. Wang;S.C. Lin;L. Hung;C. Chiu;D. Su;K. Wu;K. L. Young;Y.K. Peng

文献摘要

被引文献

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从设计属性和几何参数两个方面探讨了应力诱导空化问题。采用两种试验结构来评估电阻变化与可靠性的关系，并了解SIV机理。因此，可以推导出考虑几何结构的可靠性-鲁棒性准则。
Stress induced voiding (SIV) is explored from the aspects of design attribute and geometry parameters. Two kinds of test structures were used to evaluate resistance change in relation to reliability and to understand the SIV mechanism. Thus, a reliability-robustness guideline from a consideration of geometry configuration can be derived.