Realization of an ultra-flat silica surface with angstrom-scale average roughness using nonadiabatic optical near-field etching
Realization of an ultra-flat silica surface with angstrom-scale average roughness using nonadiabatic optical near-field etching
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DOI：
10.1007/s00340-008-3142-z
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发表时间：
2008-10-01
影响因子：
2.1
通讯作者：
Ohtsu, M.
中科院分区：
文献类型：
--
作者：
Yatsui, T.;Hirata, K.;Ohtsu, M.
我们提出了一种新的方法，光学近场蚀刻的非绝热过程中施加到一个合成的二氧化硅基板使用连续波激光（λ =532 nm）与Cl-2气体源。由于Cl-2的吸收带边能量高于光源的光子能量，因此排除了传统的绝热光化学反应。在纳米粗糙基底上产生的光学近场引起Cl-2分子的非绝热化学反应，从而选择性地蚀刻掉粗糙度，留下具有1.37埃的最小平均表面粗糙度R-a的超平合成二氧化硅表面。
We propose a new method of optical near-field etching where a nonadiabatic process is applied to a synthetic silica substrate using a continuum wave laser (lambda=532 nm) with a Cl-2 gas source. Because the absorption band edge energy of Cl-2 is higher than the photon energy of the light source, we preclude the conventional adiabatic photochemical reaction. An optical near field, generated on the nanometrically rough substrate, induces the nonadiabatic chemical reaction to the Cl-2 molecules and thereby selectively etches away the roughness, leaving an ultra-flat synthetic silica surface with a minimum average surface roughness R-a of 1.37 angstrom.