Transformer-less High-Gain DC-DC Converter with SiC Cascode JFETs for High-Voltage Applications
Transformer-less High-Gain DC-DC Converter with SiC Cascode JFETs for High-Voltage Applications
复制标题
适用于高压应用且具有 SiC 共源共栅 JFET 的无变压器高增益 DC-DC 转换器
DOI：
10.1109/ipmhvc.2018.8936777
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
M. Matin
中科院分区：
文献类型：
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作者：
Saleh S. Alharbi;Salah S. Alharbi;M. Matin
宽带隙（WBG）半导体器件由于其固有的上级开关特性和在恶劣操作条件下的高性能而为功率转换器带来许多优点。目前，传统的硅开关器件在满足快速开关、高压和高温操作的要求方面正在接近其实际极限。为了克服现有Si技术的局限性，选择碳化硅（SiC）功率器件，因为它们表现出较宽的带隙能量和较低的导通电阻，因此能够有效地提高功率密度并提高高开关和高温环境中的功率转换效率。本文提出了一种高效的无变压器高增益浮动升压转换器配备SiC共源共栅JFET的高压应用。利用双脉冲测试（DPT）技术，在不同的开关电流，栅极电阻和结温下，对Si和SiC共源共栅JFET器件的开关能量进行了评估。此外，转换器的效率与SiC功率器件的设计进行了研究和测试，在不同的开关频率和输入电压，并与Si基转换器进行了比较。结果表明，在转换器中使用的SiC功率器件显着降低了总的半导体损耗，提高了整体转换器的效率。
Wide-bandgap (WBG) semiconductor devices bring numerous advantages to power converters due to their inherent superior switching characteristics and high performance under harsh operating conditions. Currently, traditional silicon switching devices are approaching their practical limits in terms of meeting requirements for fast-switching, high-voltage, and high-temperature operations. To overcome the limitations of the existing Si technologies, silicon carbide (SiC) power devices are selected because they exhibit a wider bandgap energy with a lower on-state resistance and therefore are effectively able to improve the power density and increase efficiency of power conversion in high-switching and high-temperature environments. This paper presents an efficient transformer-less high-gain floating boost converter equipped with SiC cascode JFETs for high-voltage applications. The switching energies of both Si and SiC cascode JFET devices are evaluated using a double-pulse test (DPT) technique at different switch currents, gate resistances, and junction temperatures. In addition, the efficiency of the converter design with SiC power devices is investigated and tested at different switching frequencies and input voltages and compared with the Si-based converter. The results reveal that the SiC power devices utilized in the converter significantly reduce the total semiconductor loss and improve overall converter efficiency.