Scintillation properties of GAGG:Ce ceramic and single crystal
Scintillation properties of GAGG:Ce ceramic and single crystal
复制标题
GAGG:Ce陶瓷和单晶的闪烁性能
DOI：
10.1016/j.optmat.2020.109964
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发表时间：
2020-07-01
影响因子：
3.9
通讯作者：
Wu, Qi
中科院分区：
文献类型：
--
作者：
Zhu, Yao;Qian, Sen;Wu, Qi
研究了近年来发展起来的陶瓷和单晶掺Ce的Gd-Al-Ge石榴石(GaG：Ce)闪烁晶体。我们将它们的闪烁性能与相同尺寸的5x5x5 mm(3)样品进行了比较。在光致发光发射光谱中，陶瓷和GaG：Ce单晶分别在555 nm和515 nm处有较强的发射峰，这归因于Ce3+的5d-4f跃迁。GaG：Ce单晶在380 nm处有一个微弱的发射峰。Cs-137γ射线辐照陶瓷的光产额高于单晶。GaG：Ce陶瓷在光照后的余辉比单晶的要短。在室温下，GaG：Ce单晶受热释光的影响比陶瓷GaG：Ce更严重。陶瓷和单晶在伽马射线作用下的初级衰变时间分别为182.9 ns和50.1 ns。此外，在单晶中还发现了衰减时间的快速分量。本研究为今后制备性能更好的GaGG：Ce闪烁晶体奠定了基础。
Recently developed ceramic and single crystal Cerium-doped gadolinium aluminum gallium garnet (GAGG:Ce) scintillators were studied. We compared their scintillation properties with samples of the same 5 x 5 x 5 mm(3) size. In photoluminescence emission spectra, ceramic and single crystal GAGG:Ce showed intense emission peak at 555 nm and 515 nm, respectively, ascribed to 5d-4f transitions of Ce3+. And the single crystal GAGG:Ce had a weak emission peak appearing at 380 nm. The light yield induced by Cs-137 gamma-ray of ceramic was higher than that of single crystal. The afterglow of ceramic GAGG:Ce was shorter than that of single crystal after illumination. At room temperature, single crystal GAGG:Ce was more severely affected by thermoluminescence than ceramic GAGG:Ce. The primary decay time of ceramic and single crystal under gamma-ray was 182.9 ns and 50.1 ns, respectively. Furthermore, the fast component of decay time was found in single crystal. This research can lay the foundation for the preparation of better GAGG:Ce scintillators in the future.