Excessively Doped PbTe with Ge-Induced Nanostructures Enables High-Efficiency Thermoelectric Modules
Excessively Doped PbTe with Ge-Induced Nanostructures Enables High-Efficiency Thermoelectric Modules
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DOI:
10.1016/j.joule.2018.04.025
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发表时间:
2018-07-18
期刊:
影响因子:
39.8
通讯作者:
Kanatzidis, Mercouri G.
中科院分区:
文献类型:
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作者:
Jood, Priyanka;Ohta, Michihiro;Kanatzidis, Mercouri G.
The application of thermoelectrics in waste heat recovery requires high conversion efficiency, which is best achieved through the combination of progressive performance-enhancing strategies. In this study, we combined engineered doping, nanostructuring, and module fabrication in PbTe-based thermoelectrics to generate high-ZT materials along with high-efficiency modules. The use of excess Na (4%) as a p-type dopant greatly enhanced the thermoelectric power factor by generating extra charge carriers at high temperature. The addition of minute amounts of Ge (