Excessively Doped PbTe with Ge-Induced Nanostructures Enables High-Efficiency Thermoelectric Modules

Excessively Doped PbTe with Ge-Induced Nanostructures Enables High-Efficiency Thermoelectric Modules
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DOI:
10.1016/j.joule.2018.04.025
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发表时间:
2018-07-18
期刊:
影响因子:
39.8
通讯作者:
Kanatzidis, Mercouri G.
Kanatzidis, Mercouri G.
中科院分区:
材料科学1区
文献类型:
--
作者:
Jood, Priyanka;Ohta, Michihiro;Kanatzidis, Mercouri G.

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