Processing and characterization of high-conductance bismuth wire array composites
Processing and characterization of high-conductance bismuth wire array composites
复制标题
高电导铋线阵列复合材料的加工与表征
DOI：
10.1557/jmr.2000.0262
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发表时间：
2000
影响因子：
2.7
通讯作者：
P. Constant
中科院分区：
文献类型：
--
作者：
T. Huber;M. Graf;C. Foss;P. Constant
采用高压注射法（HPI）将Bi熔体注入多孔阳极氧化铝模板中，制备了直径为30 ~ 200 nm的Bi纳米线阵列复合材料。复合材料是致密的，Bi的体积分数超过50%。平行的Bi纳米线的长度似乎仅受主体模板厚度的限制（最大55 μm），终止于Bi块体中的复合物的两侧。单个Bi纳米线晶体结构是菱形的，具有与块体Bi相同的晶格参数;阵列中的线主要沿沿着线长度以三角轴取向。通过将复合材料粘合到铜电极上实现了低接触电阻。
We fabricated Bi nanowire array composites with wire diameters from 30 to 200 nm by high-pressure injection (HPI) of Bi melt into porous anodic alumina templates. The composites were dense, with Bi volume fraction in excess of 50%. The parallel Bi nanowires, whose length appeared to be limited only by the thickness of the host template (up to 55 μm), terminated at both sides of the composite in the Bi bulk. The individual Bi nanowire crystal structure was rhombohedral, with the same lattice parameters as that of bulk Bi; the wires in the array were predominantly oriented with the trigonal axis along the wire length. Low contact resistance was achieved by bonding the composite to copper electrodes.