Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN
Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN
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DOI：
10.1063/1.1369609
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发表时间：
2001-05
影响因子：
4
通讯作者：
S. Heikman;S. Keller;S. Denbaars;U. Mishra
中科院分区：
文献类型：
--
作者：
S. Heikman;S. Keller;S. Denbaars;U. Mishra
采用选择性区域质量传输再生长的方法制备了AlGaN/GaN高电子迁移率晶体管的欧姆接触。对于不同的接触面积和几何形状，接触电阻在0.23~1.26Ωmm之间。测得自掺杂GaN的平均电阻率为4×10−3Ωcm。制作了具有可再生接触的器件，获得了210ms/mm的跨导。该技术提供了一种低成本的再生长工艺，特别适用于高Al组分的AlGaN/GaN器件。
Ohmic contacts were fabricated for AlGaN/GaN high-electron-mobility transistors by selective-area mass transport regrowth of GaN. The contact resistance ranged from 0.23 to 1.26 Ω mm for different contact areas and geometries. The average resistivity of the autodoped regrown GaN was measured to 4×10−3 Ω cm. Devices with regrown contacts were fabricated, achieving a transconductance of 210 mS/mm. The technique provides a low-cost regrowth process, with applications in particular for high Al-composition AlGaN/GaN devices.