Measurement of the chemical sputtering yields of CH4/CD4 and C2Hx/C2Dx at the carbon divertor plates of JT-60U
Measurement of the chemical sputtering yields of CH4/CD4 and C2Hx/C2Dx at the carbon divertor plates of JT-60U
复制标题
JT-60U 碳偏滤器板 CH4/CD4 和 C2Hx/C2Dx 化学溅射产率的测量
DOI：
10.1088/0029-5515/42/6/307
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发表时间：
2002
期刊：
影响因子：
3.3
通讯作者：
K. Itami
中科院分区：
文献类型：
--
作者：
T. Nakano;H. Kubo;S. Higashijima;N. Asakura;H. Takenaga;T. Sugie;K. Itami
CH4/CD4 和 C2Hx/C2Dx 的化学溅射产率已在 JT-60U 的偏滤板上测量。 CH/CD 和 C2 光谱带的光谱测量用于估计 CH4/CD4 和 C2Hx/C2Dx 通量。在表面温度为380、440和560 K时，CH4产率分别为~0.8%、1-2%和2-3%，C2Hx产率分别为1-2%、3-4%和4-5%，氢离子总溅射产率分别为3-4%、~8%和~10%。随着偏滤器板的离子通量 (Γion) 增加，溅射产率 (Y) 降低，即 Y∝Γion(-0.05 至 -0.40)。随着电子温度（Te）的增加，溅射产率增加，即Y∝Te0.5。从Y∝Te0.5的回归分析结果得出结论，产率对离子通量的负相关性归因于碳板的入射离子能量。根据Hα/Dα强度的离子通量测量，氘离子和氢离子的溅射产率之比估计≥1.5。 C2Hx/C2Dx溅射产率约占溅射碳原子总数的80%。
The chemical sputtering yields of CH4/CD4 and C2Hx/C2Dx have been measured at the divertor plates of JT-60U. Spectroscopic measurements for CH/CD and C2 spectral bands are applied to estimate the CH4/CD4 and the C2Hx/C2Dx flux. At the surface temperatures of 380, 440 and 560 K, the CH4 yield is, respectively, ~0.8%, 1-2% and 2-3%, the C2Hx yield 1-2%, 3-4% and 4-5%, and the total sputtering yield by hydrogen ions 3-4%, ~8% and ~10%. With increasing ion flux to the divertor plates (Γion), the sputtering yields (Y) decrease, i.e. Y∝Γion(-0.05 to -0.40). With increasing electron temperature (Te), the sputtering yields increase, i.e. Y∝Te0.5. It is concluded from the result of regression analysis of Y∝Te0.5 that the negative dependence of the yields on the ion flux is attributed to the incident ion energies to the carbon plates. The ratio of the sputtering yields by deuterium ions and hydrogen ions is estimated to be ≥1.5 based on the ion flux measurement by Hα/Dα intensity. The C2Hx/C2Dx sputtering yield accounts for ~80% of the total number of sputtered carbon atoms.