In-band diode pumped high power Ho:YLF laser

In-band diode pumped high power Ho:YLF laser
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DOI：
10.1109/cleoe-iqec.2013.6800613
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发表时间：
2013-05
期刊：
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC
影响因子：
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通讯作者：
K. Scholle;S. Lamrini;F. Gatzemeier;P. Koopmann;P. Fuhrberg
K. Scholle;S. Lamrini;F. Gatzemeier;P. Koopmann;P. Fuhrberg
中科院分区：
其他
文献类型：
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作者：
K. Scholle;S. Lamrini;F. Gatzemeier;P. Koopmann;P. Fuhrberg

文献摘要

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本文首次报道了以中心发射波长为1930 nm的GaSb激光二极管叠加作为泵浦源的Ho:YLF激光器带内泵浦的结果。Ho:YLF是一种非常有吸引力的激光材料，因为上能级的寿命比Ho:YAG长得多（~ 14 ms），发射截面也比Ho:YAG高。此外，Ho:YLF中的热透镜更弱，即使在强烈的端泵浦下也有助于产生衍射受限光束。
In this paper we present for the first time results on in-band pumping of a Ho:YLF laser using a GaSb laser diode stack with centre emission wavelength at 1930 nm as pump source. Ho:YLF is a very attractive laser material, because the lifetime of the upper laser level is much longer ( ~ 14 ms) than in Ho:YAG and the emission cross sections are higher. Additionally the thermal lens in Ho:YLF is much weaker, which helps to generate diffraction limited beams even under intense end-pumping.