Molecular Beam Epitaxy of GaSb and GaSbxAs1-x
Molecular Beam Epitaxy of GaSb and GaSbxAs1-x
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DOI：
10.1143/jjap.17.2091
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发表时间：
1978-12
影响因子：
1.5
通讯作者：
M. Yano;Yukio Suzuki;T. Ishii;Y. Matsushima;M. Kimata
中科院分区：
文献类型：
--
作者：
M. Yano;Yukio Suzuki;T. Ishii;Y. Matsushima;M. Kimata
采用分子束外延的方法成功地生长了GaSb和GaSbxAs1-x单晶薄膜。未掺杂的GaSb表现为p型导电，发现Te作为mbe生长的GaSb的供体杂质是有效的。对这些薄膜电性能的深入分析表明，在生长层和衬底之间的界面附近的外延层中含有许多缺陷。制备了具有完整组分的GaSbxAs1-x薄膜，光吸收测量的能隙随组分的变化呈向下弯曲的趋势。
GaSb and GaSbxAs1-x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSbxAs1-x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.