Structural Study of Si(111)(2√3×2√3)R30°–Sn Surfaces
Structural Study of Si(111)(2√3×2√3)R30°–Sn Surfaces
复制标题
Si(111)(2√3×2√3)R30°–Sn表面的结构研究
DOI:
10.1143/jjap.42.5239
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发表时间:
2003
影响因子:
1.5
通讯作者:
K. Cho
中科院分区:
文献类型:
--
作者:
T. Ichikawa;K. Cho
In order to clarify the structure of high-temperature phase of Si(111)(2√3×2√3)R30°–Sn surfaces, in situ scanning tunneling microscopic observations were performed. The study led to important findings that the high-temperature phase is not a (1×1) structure but a disordered one and that the (2√3×2√3)R30° structure changes to the disordered one through a high-temperature (2√3×2√3)R30° structure newly found. A model for the (2√3×2√3)R30° structure at room temperature was proposed through an ab initio structure relaxation calculation, which can explain well the features of diffraction intensity, Paterson function and scanning tunneling images of the (2√3×2√3)R30° structure.