A highly integrated IR-UWB transceiver for communication and localization
A highly integrated IR-UWB transceiver for communication and localization
复制标题
用于通信和定位的高度集成的 IR-UWB 收发器
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
G. Fischer
中科院分区：
文献类型：
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作者：
O. Klymenko;D. Martynenko;G. Fischer
介绍了一种用于脉冲无线电(IR)超宽带(UWB)应用的符合IEEE 802.15.4a标准的单片集成单片收发器。发射机被设计为在强制信道#9(7.9872 GHz)上的上超宽带频段中操作。为了确保符合标准，收发器组件的设计朝着更高的集成度、低成本和低功耗运行的方向进行。该接收器采用直接下变频概念。该发射机是选通振荡器原理的实现，用于产生持续时间为2 ns的短脉冲。它根据标准提供OOK和BPSK调制能力。完全集成的频率合成器为接收器和发射器提供所有必要的LO和时钟信号。为了最大限度地减少片上串扰，所有电源电压都是内部调节的。该电路采用0.25mSiGe：CBiCBiCMOSe工艺，硅面积为2.25×2.35mm2。
This paper describes a monolithic integrated single-chip transceiver intended for Impulse Radio (IR) Ultra-wide Band (UWB) applications compliant with the IEEE 802.15.4a standard. The transmitter is designed to operate in the upper UWB band on the mandatory channel #9 (7.9872 GHz). In order to assure compliance with the standard, the transceiver components are designed towards higher degree of integration, low cost and low power consumption operation. The receiver employs a direct down-conversion concept. The transmitter is an implementation of the gated-oscillator-principle to generate short impulses of 2 ns duration. It provides OOK and BPSK modulation capability in accordance with the standard. A fully integrated frequency synthesizer delivers all necessary LO and clock signals for the receiver and the transmitter. In order to minimize the on-chip cross-talk all supply voltages are internally regulated. The circuit was fabricated in a 0.25 μm SiGe:C BiCMOS technology occupying a Si area of 2.25 × 2.35 mm2.