Interfacial versus filamentary resistive switching in TiO2 and HfO2 devices
Interfacial versus filamentary resistive switching in TiO2 and HfO2 devices
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DOI：
10.1116/1.4940129
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发表时间：
2016-01-01
影响因子：
1.4
通讯作者：
Alibart, Fabien
中科院分区：
文献类型：
--
作者：
Sassine, Gilbert;La Barbera, Selina;Alibart, Fabien
在本文中，作者专注于两个公认的开关机制，即界面（或均匀）开关和间接开关。这些开关机制已在各种设备中报告，但仍有待进行更广泛的分析。通过比较TiO 2和HfO 2基阻变器件在可变性、保持性、可控性和开关能量方面的性能，作者讨论了氧空位组织如何确定一组通用属性，这些属性将定义每种材料/器件技术可以预见的应用范围。(C)2016年美国真空学会。
In this paper, the authors focus on two well-identified switching mechanisms, namely, interfacial (or homogeneous) switching and filamentary switching. These switching mechanisms have been reported in various devices, but a broader analysis remains to be conducted. By comparing the performances of TiO2- and HfO2- based resistive switching devices in terms of variability, retention, controllability, and switching energy, the authors discuss how oxygen vacancies organization can determine a general set of properties that will define the range of applications that could be envision for each material/device technology. (C) 2016 American Vacuum Society.