Low-field magnetic-relaxation effects in CeCu2Si
Low-field magnetic-relaxation effects in CeCu2Si
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DOI：
10.1103/physrevb.37.9830
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发表时间：
1988-06
期刊：
影响因子：
--
通讯作者：
Mota;Visani;Pollini
中科院分区：
文献类型：
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作者：
Mota;Visani;Pollini
我们发现重费米子 Ce${\mathrm{Cu}}_{2}$${\mathrm{Si}}_{2}$ 在 $Hl400$ Oe 处磁化强度 $M$ 的时间效应与我们最近报道的高 ${T}_{c}$ 超导体 Sr-La-Cu-O 和 Ba-La-Cu-O 的效应类似。如果对原始块状多晶样品施加小磁场 ${H}_{i}$，则磁化强度 $M$ 在 ${10}^{5}$ 秒的观察时间内准确地遵循 $M(t)\ensuremath{-}M({t}_{0})\ensuremath{\propto}\mathrm{ln}(\frac{t}{{t}_{0}})$ 定律随时间松弛。当字段 ${H}_{i}$ 被删除时，在 $H=0$ 处遵循相同的定律。对于$Hl{H}_{c1}$，对数率$\frac{\ensuremath{\partial}M}{\ensuremath{\partial}\mathrm{ln}t}$与${H}_{i}^{4}$成正比，并且当通量渗透到样品中时几乎与${H}_{i}$无关。
We have found time effects in the magnetization $M$ of the heavy-fermion Ce${\mathrm{Cu}}_{2}$${\mathrm{Si}}_{2}$ at $Hl400$ Oe similar to the effects we recently reported for the high-${T}_{c}$ superconductors Sr-La-Cu-O and Ba-La-Cu-O. If a small field ${H}_{i}$ is applied to a virgin bulk polycrystalline specimen, the magnetization $M$ relaxes with time accurately following the law $M(t)\ensuremath{-}M({t}_{0})\ensuremath{\propto}\mathrm{ln}(\frac{t}{{t}_{0}})$ over observation times of ${10}^{5}$ sec. The same law is followed at $H=0$ when the field ${H}_{i}$ is removed. For $Hl{H}_{c1}$ the logarithmic rate $\frac{\ensuremath{\partial}M}{\ensuremath{\partial}\mathrm{ln}t}$ is directly proportional to ${H}_{i}^{4}$ and becomes almost independent of ${H}_{i}$ when flux penetrates into the sample.