Highly Sensitive Strain Sensors with FeCoSiB Amorphous Films.
Highly Sensitive Strain Sensors with FeCoSiB Amorphous Films.
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采用 FeCoSiB 非晶薄膜的高灵敏度应变传感器。
DOI：
10.3379/jmsjmag.23.1425
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
K. Arai
中科院分区：
文献类型：
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作者：
K. Shin;M. Inoue;K. Arai
研究了具有高饱和磁致伸缩和优异软磁性能的非晶 FeCoSiB 薄膜，以确定其应变敏感性。薄膜因基底弯曲而受到应变，从而通过磁弹性耦合引起薄膜磁各向异性的变化。该薄膜的品质因数 F ≡ (θμ/θe)/μ（每单位应变 e 的薄膜磁导率变化 μ）为 1.2 × 105，与非晶带相当。为了研究磁致伸缩薄膜作为应变传感器元件的用途，我们通过光刻和离子铣削工艺制备了曲折图案薄膜。在 1 MHz 至 1 GHz 频率范围内测量施加应变时图案化薄膜的阻抗变化。由于 F 值较大，薄膜的高频阻抗发生了很大的变化：当施加 300 × 10-6 的应变时，在 100 MHz 下观察到阻抗变化为 46%。还证明，通过使用应变相关阻抗，可以通过薄膜图案检测到 1 × 10-7 的小应变。
Amorphous FeCoSiB films with high saturation magnetostriction and excellent soft magnetic properties were studied to determine their strain sensitivity. The films were subjected to strain by bending of their substrates, which caused a change in the magnetic anisotropy of films via magnetoelastic coupling. The films exhibited a figure of merit F ≡ (θμ/θe)/μ (change in film permeability μ per unit of strain e) of 1.2 × 105, which is comparable to that of amorphous ribbons. To study the use of the magnetostrictive films as strain sensor elements, we prepared meander-patterned films by means of the photolithography and ion milling processes. The impedance change in the patterned films when strain was applied was measured in the frequency range from 1 MHz to 1 GHz. Reflecting the large value of F, the high-frequency impedance of the films was changed considerably: a change in impedance of 46% was observed at 100 MHz when a strain of 300 × 10-6 was applied. It is also demonstrated that, by using the strain-dependent impedance, a small strain of 1 × 10-7 can be detected by means of the film pattern.