Out-of-plane and in-plane ferroelectricity of atom-thick two-dimensional InSe
Out-of-plane and in-plane ferroelectricity of atom-thick two-dimensional InSe
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DOI：
10.1088/1361-6528/ac0ac5
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发表时间：
2021-06
期刊：
影响因子：
3.5
通讯作者：
Haowen Hu;Huaipeng Wang;Yilin Sun;Jiawei Li;J. Wei;D. Xie;Hongwei Zhu
中科院分区：
文献类型：
--
作者：
Haowen Hu;Huaipeng Wang;Yilin Sun;Jiawei Li;J. Wei;D. Xie;Hongwei Zhu
二维铁电材料是三维钙钛矿基铁电陶瓷材料的理想替代材料。然而，大多数研究都集中在非中心对称二维货车德瓦耳斯材料的构建，只有少数是实验构建的。在这里，我们实验证明了电压可调的面外（OOP）和面内（IP）铁电性的共存，在几层的InSe制备的溶液加工方法和制造铁电半导体沟道晶体管。可逆的极化可以启动瞬时开关的电阻与高的ON/OFF比和可比的亚阈值摆幅下的栅极调制下的160 mV/dec。从理论上分析了这种中心对称结构独特的OOP和IP铁电性的成因。
Two-dimensional (2D) ferroelectric materials are promising substitutes of three-dimensional perovskite based ferroelectric ceramic materials. Yet most studies have been focused on the construction of non-centrosymmetric 2D van der Waals materials and only a few are constructed experimentally. Herein, we experimentally demonstrate the co-existence of voltage-tunable out-of-plane (OOP) and in-plane (IP) ferroelectricity in few-layer InSe prepared by a solution-processable method and fabricate ferroelectric semiconductor channel transistors. The reversible polarization can initiate instant switch of resistance with high ON/OFF ratios and a comparable subthreshold swing of 160 mV/dec under gate modulation. The origins of such unique OOP and IP ferroelectricity of the centrosymmetric structure are theoretically analyzed.