Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties
Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties
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DOI：
10.1007/s12274-012-0273-7
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发表时间：
2012-11
期刊：
影响因子：
9.9
通讯作者：
Yuan–Biao Huang;Fei Liu;Q. Luo;Yuan Tian;Q. Zou;Chen Li;Chengmin Shen;S. Deng;C. Gu;N. Xu;Hongjun Gao
中科院分区：
文献类型：
--
作者：
Yuan–Biao Huang;Fei Liu;Q. Luo;Yuan Tian;Q. Zou;Chen Li;Chengmin Shen;S. Deng;C. Gu;N. Xu;Hongjun Gao
采用化学气相沉积法(CVD)制备了大面积图案化碳化硼纳米线(B4CNWS)。B4C纳米粒子的平均直径约为50 nm，平均长度为20μm，具有单晶结构，电导率约为5.1×10−2Ω−1·cm−1。图案化的B4C纳米粒子薄膜的场发射测量表明，其开启电场为2.7V/μm，低于连续的B4C纳米粒子薄膜。单根纳米线在高应变弯曲循环下也表现出极好的柔韧性，没有变形或破坏。综上所述，这表明B4C NW是一种很有前途的柔性冷阴极材料。
Large-area patterned boron carbide nanowires (B4C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B4C NWs is about 50 nm, with a mean length of 20 μm. The B4C NWs have a single-crystal structure and conductivities around 5.1 × 10−2Ω−1·cm−1. Field emission measurements of patterned B4C NWs films show that their turn-on electric field is 2.7 V/μm, lower than that of continuous B4C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B4C NWs are a promising candidate for flexible cold cathode materials.