InGaAsP(1.3 μm)/InP vertical‐cavity surface‐emitting laser grown by metalorganic vapor phase epitaxy
InGaAsP(1.3 μm)/InP vertical‐cavity surface‐emitting laser grown by metalorganic vapor phase epitaxy
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有机金属气相外延生长InGaAsP(1.3 μm)/InP垂直腔面发射激光器
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
R. Logan
中科院分区：
文献类型：
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作者：
L. Yang;Mingcho Wu;K. Tai;T. Tanbun;R. Logan
报道了金属有机气相外延生长的InGaAsP/InP垂直腔面发射激光器(VCSEL)，发射波长在1.3μm附近。该VCSEL结构包括一个双异质结腔、一个金属反射镜和一个SiO_2/Si介质叠层(三对)反射镜，测量反射率为98%。对于具有1μm厚有源层的15μm-diam器件，在77K时获得了低至5 mA的阈值电流，在脉冲测量精度范围内接近最好的报告值(6 MA)。最高工作温度为220K。
We report InGaAsP/InP vertical‐cavity surface‐emitting lasers (VCSELs) with an emission wavelength near 1.3 μm grown by metalorganic vapor phase epitaxy. The VCSEL structure contains a double‐heterostructure cavity, a metal mirror, and a SiO2/Si dielectric stack (three pairs) mirror with a measured reflectivity of 98%. A threshold current as low as 5 mA for 15‐μm‐diam devices with a 1‐μm‐thick active layer at 77 K was achieved, which is close to the best reported value (6 mA) within the accuracy of the pulse measurement. The highest operating temperature was 220 K.