Effect of Deposition Pressure on Switching Field Distribution of CoPtCr–SiO$_2$Perpendicular Magnetic Recording Thin Film Media
Effect of Deposition Pressure on Switching Field Distribution of CoPtCr–SiO$_2$Perpendicular Magnetic Recording Thin Film Media
复制标题
沉积压力对 CoPtCr 转换场分布的影响
DOI：
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发表时间：
2006
影响因子：
2.1
通讯作者：
R. Jiang
中科院分区：
文献类型：
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作者：
D. Vokoun;C. Lai;Meng;R. Jiang
We studied the effects of the deposition Ar pressure on the switching field distribution (SFD) of Tb/Pt/Ru/CoPtCr-SiO2 perpendicular media. In this study, we describe a simple method for obtaining parameters of the SFD such as the standard deviation (SD) while taking the effect of demagnetizing field into account. The SFD changed its character greatly with the change of Ar pressure. The differences in the SD of the SFD of various samples may originate from the variation of intergranular exchange and the demagnetizing field due to different Ar pressure
