Photoluminescence Studies of ZnO thin films grown by atomic layer epitaxy
Photoluminescence Studies of ZnO thin films grown by atomic layer epitaxy
复制标题
DOI：
10.1016/j.jlumin.2004.02.006
复制
发表时间：
2004-09-01
影响因子：
3.6
通讯作者：
Lee, CM
中科院分区：
文献类型：
--
作者：
Lim, JM;Shin, KC;Lee, CM
采用原子层外延技术，以二乙基锌和水为反应气体，在170 ℃和400 ℃的衬底温度下，在蓝宝石衬底上生长了ZnO薄膜，并在800- 1000 ℃的温度下退火。为了研究退火处理对ZnO薄膜光学性质的影响，薄膜在沉积后在不同的退火温度下退火。退火处理后的ZnO薄膜的光学性能进行了表征的光致发光（PL）。在室温下观察到了可见光区的强自由激子发射和弱缺陷带发射。根据半峰全宽，在室温下测量了67.54meV的自由激子辐射。通过在氧气气氛中退火ZnO薄膜，在紫外光和可见光区的PL强度峰都增加。相反，只有在UV光区的PL强度峰通过在氮气氛中退火选择性地增加。另外，在170 ℃下沉积的ZnO薄膜比在1000 ℃下沉积的ZnO薄膜显示出更好的PL特性。(C)2004 Elsevier B. V.保留所有权利。
ZnO thin films have been grown on sapphire substrates by the atomic layer epitaxy technique using diethyzinc and H2O as reactant gases at substrate temperatures of 170degreesC and 400degreesC and annealed at temperatures of 800-1000degreesC. In order to investigate the effect of annealing treatment on the optical properties of ZnO films, the films have been annealed at various annealing temperatures after deposition. After the annealing treatment the optical properties of ZnO thin films were characterized by photoluminescence (PL). A strong free exciton emission with a weak defect-band emission in the visible region was observed at room temperature. Based on the full-width at half-maximum measurement of the free -xciton emission of 67.54 meV have been made at room temperature. Both the PL intensity peaks in the UV light and visible light regions are increased by annealing the ZnO film in an oxygen atmosphere. In contrast, only the PL intensity peak in the UV light region is selectively increased by annealing it in a nitrogen atmosphere. Also, the ZnO film deposited at 170degreesC shows better PL characteristics than that deposited at 1000degreesC. (C) 2004 Elsevier B.V. All rights reserved.