Spatial stochastic processes for yield and reliability management with applications to nano electronics
Spatial stochastic processes for yield and reliability management with applications to nano electronics
复制标题
用于产量和可靠性管理的空间随机过程及其在纳米电子学中的应用
DOI:
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发表时间:
2005
期刊:
影响因子:
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通讯作者:
Jung Yoon Hwang
中科院分区:
文献类型:
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作者:
Jung Yoon Hwang
Spatial Stochastic Processes for Yield and Reliability Management with Applications to Nano Electronics. (December 2004) Jung Yoon Hwang, B.A., Korea Military Academy; M.S., Texas A&M University Chair of Advisory Committee: Dr. Way Kuo This study uses the spatial features of defects on the wafers to examine the detection and control of process variation in semiconductor fabrication. It applies spatial stochastic process to semiconductor yield modeling and the extrinsic reliability estimation model. New yield models of integrated circuits based on the spatial point process are established. The defect density which varies according to location on the wafer is modeled by the spatial nonhomogeneous Poisson process. And, in order to capture the variations in defect patterns between wafers, a random coefficient model and model-based clustering are applied. Model-based clustering is also applied to the fabrication process control for detecting these defect clusters that are generated by assignable causes. An extrinsic reliability model using defect data and a statistical defect growth model are developed based on the new yield model.