Highly oriented ZnO films grown by laser evaporation
Highly oriented ZnO films grown by laser evaporation
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DOI：
10.1116/1.572219
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发表时间：
1983-10
期刊：
影响因子：
--
通讯作者：
H. Sankur;J. Cheung
中科院分区：
文献类型：
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作者：
H. Sankur;J. Cheung
一种相对较新的激光辅助蒸发沉积技术应用于ZnO薄膜的沉积。在50 ~ 450℃的温度下，采用CO2激光蒸发法制备了ZnO粉体靶材。这些薄膜的透射光谱在380 nm处有一个明显的截止点。椭偏测量的折射率为1.98-2.04。生长的薄膜是导电的（0.1-1 Ω cm），但当0.1%的Li2O加入到源时，就会变成绝缘的。用这些薄膜制成的SAW器件证明了激光蒸发ZnO的压电性质。结果表明，激光沉积技术适用于生产器件级的ZnO薄膜，且具有良好的再现性。
A relatively new deposition technique involving laser‐assisted evaporation is applied to the deposition of thin ZnO films. Highly oriented and crystalline films of ZnO were obtained by CO2 laser evaporation of ZnO powder targets on substrates held at 50–450 °C. Optical transmission spectra of these films show a sharp cutoff at 380 nm. The refractive index, as measured by ellipsometry, is 1.98–2.04. As‐grown films are conducting (0.1–1 Ω cm), but become insulating when 0.1% Li2O is added to the source. SAW devices built with these films proved the piezoelectric nature of laser‐evaporated ZnO. It is found that the laser deposition technique is applicable to producing device quality ZnO films with good reproducibility.