Gas field ion source and liquid metal ion source charged particle material interaction study for semiconductor nanomachining applications
Gas field ion source and liquid metal ion source charged particle material interaction study for semiconductor nanomachining applications
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DOI：
10.1116/1.3511509
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发表时间：
2010-11-01
影响因子：
1.4
通讯作者：
McVey, Shawn
中科院分区：
文献类型：
--
作者：
Tan, Shida;Livengood, Richard;McVey, Shawn
半导体制造技术节点将在未来几年内发展到22、15和11 nm代。对于半导体纳米加工应用，需要进一步的束斑尺寸缩放，超出当前一代Ga+聚焦离子束技术所能实现的。因此，将需要持续的Ga+射束缩放和/或替代射束技术创新。在这项工作中，几种替代离子束技术进行了探索和比较，以镓+束的关键纳米加工和基板相互作用的属性。首先，用入射在硅和铜上的各种离子种类进行彻底的蒙特卡罗模拟。此外，硅和铜基板实验暴露于氦，氖和镓的离子束。随后分析这些衬底以确定溅射产率和表面下损伤。(C)2010年美国真空学会。[DOI：10.1116/1.3511509]
Semiconductor manufacturing technology nodes will evolve to the 22, 15, and 11 nm generations in the next few years. For semiconductor nanomachining applications, further beam spot size scaling is required beyond what is capable by present generation Ga+ focused ion beam technology. As a result, continued Ga+ beam scaling and/or alternative beam technology innovations will be required. In this work, several alternative ion beam technologies are explored and compared to Ga+ beam for key nanomachining and substrate interaction attributes. First, thorough Monte Carlo simulations were conducted with various ion species incident on silicon and copper. Additionally, silicon and copper substrates were experimentally exposed to ion beams of helium, neon, and gallium. These substrates were subsequently analyzed to determine the sputter yields and subsurface damage. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3511509]