Production and beam annealing of damagein carbon implanted silicon. II
Production and beam annealing of damagein carbon implanted silicon. II
复制标题
碳注入硅损伤的生产和束流退火。
DOI：
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发表时间：
1978
期刊：
影响因子：
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通讯作者：
F. Saris
中科院分区：
文献类型：
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作者：
W. Kool;H. Roosendaal;L. Wiggers;F. Saris
本文研究了能量在30-200 keV的H ~+和He ~+离子束对70 keV注C硅损伤的退火效应。为了很好地描述退火行为，有必要考虑同时发生的损伤引入。结果表明，初始损伤退火速率与损伤量成正比。的比例常数是有关的一个量在较早的文件中介绍，以描述在H+或He+的影响后，在未注入Si的损伤产生的饱和效应。这表明，相同的机制支配这两个过程：束致损伤退火和损伤引入的饱和。
Abstract The annealing of damage introduced by 70 keV C implantation of Si is studied for impact of H+ and He+ beams in the energy interval 30-200 keV. For a good description of the annealing behaviour it is necessary to account for the damage introduction which occurs simultaneously. It turns out that the initial damage annealing rate is proportional to the amount of damage. The proportionality constant is related to a quantity introduced in an earlier paper in order to describe saturation effects in the damage production after H+ or He+ impact in unimplanted Si. This indicates that the same mechanism governs both processes: beam induced damage annealing and saturation of the damage introduction.